The Effects of Electronic Doping on Quantum Materials: Cuprates and Graphene

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The Effects of Electronic Doping on Quantum Materials: Cuprates and Graphene

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Title: The Effects of Electronic Doping on Quantum Materials: Cuprates and Graphene
Author: LeBlanc, James Patrick Francis
Department: Department of Physics
Program: Physics
Advisor: Nicol, Elisabeth
Abstract: In recent years there has been significant work aimed at understanding what effect the variation of electronic doping has on material properties. In the high transition-temperature (high-T$_c$) cuprate superconductors hole doping has an impact on the superconducting transition temperature. In the underdoped regime, the cuprates exhibit anomalous properties due to a pseudogap which forms and is thought to be related to Mott insulating physics. While there is no general consensus as to the mechanism underlying high temperature superconductivity, the resonating valence bond (RVB) theory proposed by Anderson in 1987 with a Gutzwiller projected d-wave BCS wave function could give a first picture of the high-T$_c$ cuprates. We have calculated properties of the cuprates using the assumption that the pseudogap state acts as a normal state to an otherwise standard BCS mean field theory. We find that the phenomenological RVB spin liquid model proposed by Yang, Rice and Zhang (YRZ) is highly successful at describing the doping dependent features of the cuprates. Through application of the YRZ model and the tools of many-body theory we present results on anomalous properties observed in: electronic specific heat; Raman and angle-resolved photoemission spectroscopy (ARPES) data; effective mass renormalization; and thermal broadening seen in ARPES. We verify that the YRZ ansatz qualitatively describes these anomalies along with their doping dependent variations. We conclude from this work that the physics underlying the pseudogap, while distinct in origin from superconductivity, is likely to arise from an RVB wavefunction that is closely related to the BCS state. In graphene, variation in doping modifies the polarization function which describes a screened electron-electron interaction. This leads to additional features in the spectral function which are due to electron-plasmon coupling. In this work, we calculated the electronic density of states including this interaction along with its doping dependence with and without an electron-phonon interaction. We find clear features of electron-electron interactions in the density of states. These features are related to the energies of plasmaron bands in the spectral function and can be modified through doping so as to be distinct from the phonon energy scales.
URI: http://hdl.handle.net/10214/3562
Date: 2012-05-04


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